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IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Preferred devices are Motorola recommended choices for future use and best overall value.
hFE , DC CURRENT GAIN
* * * *
. . . for general-purpose power amplifier and switching applications.
Complementary Silicon High-Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Junction-To-Free-Air Thermal Resistance
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25_C Derate above 25_C
Base Current -- Continuous
Collector Current -- Continuous Peak (1)
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
10 A Collector Current Low Leakage Current -- ICEO = 0.7 mA @ 60 V Excellent dc Gain -- hFE = 40 Typ @ 3.0 A High Current Gain Bandwidth Product -- hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz
Characteristic
Rating
200
100
500
5.0 0.1
50
10
20
v 10%.
Symbol
Symbol
TJ, Tstg
VCEO
RJC
RJA
VCB
VEB
PD
IC
IB
Figure 1. DC Current Gain
NPN PNP
1.0 IC, COLLECTOR CURRENT (A)
TIP33B TIP34B
80 V
80 V
- 65 to + 150
35.7
1.56
Max
80 0.64
3.0
5.0
10 15
TIP33C TIP34C
100 V
100 V
VCE = 4.0 V TJ = 25C
Watts W/_C
_C/W
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
10
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 80 WATTS
*Motorola Preferred Device
TIP33B* TIP33C PNP TIP34B* TIP34C
CASE 340D-01 TO-218AC
Order this document by TIP33B/D
NPN
1
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TIP33B TIP33C TIP34B TIP34C
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle
FORWARD BIAS
The Forward Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during forward bias. The data is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10%, and must be derated thermally for TC > 25_C.
DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 0.5 A, VCE = 10 V, f = 1.0 MHz) Small-Signal Current Gain (IC = 0.5 A, VCE = 10 V, f = 1.0 kHz) Base-Emitter On Voltage (IC = 3.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) Collector-Emitter Saturation Voltage (IC = 3.0 A, IB = 0.3 A) (IC = 10 A, IB = 2.5 A) DC Current Gain (IC = 1.0 A, VCE = 4.0 V) (IC = 3.0 A, VCE = 4.0 V) Emitter-Base Cutoff Current (VEB = 5.0 V, IC = 0) Collector-Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) Collector-Emitter Cutoff Current (VCE = 60 V, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) 0.2 IC, COLLECTOR CURRENT (AMPS) 0.5 0.1 1.0 1.0 5.0 3.0 2.0 15 10
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
2 Figure 2. Maximum Rated Forward Bias Safe Operating Area
TC = 25C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT 10 ms Characteristic dc 1.0 ms
v 2.0%.
TIP33B TIP34B TIP33C TIP34C
TIP33B, TIP33C, TIP34B, TIP34C
300 s
70 100
TIP33B, TIP34B TIP33C, TIP34C
REVERSE BIAS
The Reverse Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during reverse biased turn-off. This rating is verified under clamped conditions so the device is never subjected to an avalanche mode.
5.0
10
15
20
0
0
Motorola Bipolar Power Transistor Device Data Figure 3. Maximum Rated Forward Bias Safe Operating Area
20 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICES hFE hfe fT Min 80 100 3.0 20 40 20 -- -- -- -- -- -- -- TIP33B TIP34B L = 200 H IC/IB 5.0 VBE(off) = 0 to 5.0 V TC = 100C Max -- 100 1.6 3.0 1.0 4.0 1.0 0.4 0.7 -- -- -- -- TIP33C TIP34C Unit Vdc Vdc Vdc mA mA mA -- -- MHz 100
TIP33B TIP33C TIP34B TIP34C
PACKAGE DIMENSIONS
C B Q E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078
U S K L
1 2
4
A
3
DIM A B C D E G H J K L Q S U V
D V G
J H
STYLE 1: PIN 1. 2. 3. 4.
CASE 340D-01 TO-218AC ISSUE A
Motorola Bipolar Power Transistor Device Data
3
TIP33B TIP33C TIP34B TIP34C
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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4
Motorola Bipolar Power Transistor Device Data
*TIP33B/D*
TIP33B/D

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